Full analysis of the hottest third generation semi

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The third generation semiconductor technology, application, market full analysis

wide band gap semiconductor (WBS) is the third generation semiconductor material developed after the first generation element semiconductor material (SI) and the second generation compound semiconductor material (GaAs, gap, InP, etc.). The band gap width is larger than that of the pneumatic and acoustic formula, which is UHF 2eV. This kind of material mainly includes SiC (silicon carbide), c-BN (cubic boron nitride), Gan (gallium nitride), AlN (aluminum nitride) ZnSe (zinc selenide) and diamond, etc

the better developed wide band gap semiconductors are mainly SiC and Gan, of which SiC developed earlier. Some parameters of silicon carbide SiC, gallium nitride Gan, silicon Si and gallium arsenide GaAs are shown in the figure below:

comparison of important parameters of wide band gap semiconductor materials (first generation - third generation)

the band gap width of SiC and Gan is much larger than that of Si and GaAs, and the corresponding intrinsic carrier concentration is smaller than that of Si and GaAs, The maximum operating temperature of wide band gap semiconductors is higher than that of the first and second generation semiconductors. The breakdown field strength and saturated thermal conductivity are also much greater than that of Si and GaAs

third generation wide band gap semiconductor applications

according to the development of the third generation semiconductor, its main applications are semiconductor lighting, power electronic devices, lasers and detectors, and other four fields, each of which has different industrial maturity. In the frontier research field, wide band gap semiconductors are still in the stage of laboratory research and development

the third generation wide band gap semiconductor material application field

semiconductor lighting

Blue LED uses substrate materials to divide the technical route. For GaN based semiconductors, only sapphire ((Al2O3), SiC, Si, Gan and AlN are left as substrate materials. The industrialization of the latter two is far from fashionable. Let's discuss the first three. In general, the three materials have their own merits. Sapphire is the most widely used, with low cost, but poor conductivity and low thermal conductivity; Monocrystalline silicon substrate has the largest size and the lowest cost, but it has congenital huge lattice mismatch and thermal mismatch; Silicon carbide has superior performance, but the preparation technology of the substrate itself must put the equipment manufacturing industry behind

three kinds of LED substrates

global LED substrate Market Analysis: Plessy, crystal optoelectronics and Samsung mainly use silicon substrates, but the technology started late. At present, the industrial scale is small and the market share is low; Cree mainly uses silicon carbide substrates, but due to its cost problems and patent monopoly, few other enterprises are involved. Soraa company led by Takeji Nakamura is known to be using gallium nitride (GAN) substrate, which is a good led substrate material, but it is more expensive than sapphire, and the production size is also limited, so it cannot be widely used. Therefore, sapphire substrate can develop rapidly and occupy the mainstream market

according to the latest research information of IHS, which obtains the driving force by injecting and burning chemicals, 96.3% of the global LED production used sapphire substrates in 2015, and it is expected that this data will rise to 96.7% by 2020. The sapphire application market was boosted in 2015 mainly due to the decline in prices. In particular, 4-inch wafers accounted for 55% of the market share in 2015, of which 9.9% were divided by major manufacturers such as Samsung, Seoul semiconductor, and wafer optoelectronics; The production capacity of 6-inch wafers also continued to grow, with OSRAM, Lumileds, LG Chemical and Kerui as the first choice

power devices

development history of SiC and Gan commercialized power devices

many companies have begun to develop SiC MOSFET, including wolfspeed (acquired by Infineon) of Cree, Roma, Italian semiconductor, Mitsubishi and general electric. In contrast, fewer players entered the Gan market and started late

development process of SiC semiconductor materials and devices

in 2015, the size of SiC Power semiconductor market (including diodes and transistors) was about US $200million. By 2021, its market size is expected to exceed US $550million. During this period, the compound annual growth rate is expected to reach 19% in the 2015 rubber and plastic and innovative material utilization seminar. There is no doubt that the power factor correction (PFC) power supply market, which consumes a lot of diodes, will still be the most important application of SiC power semiconductors

sic device market development trend

at present, the main Gan products in the market are V enhanced high electron mobility heterojunction transistor (HEMT) and 600 V HEMT hybrid series switch applied to high power density dc/dc power supply. Foreign manufacturers mainly include EPC, IR, transphorm, Panasonic, exagan, Gan systems and other companies. Chinese Gan related enterprises include IDM, AVIC microelectronics, Suzhou Nengxun, and material manufacturers such as Zhongjia semiconductor, San'an optoelectronics, and Hangzhou Shilan micro

development history of GaN based power devices

microwave devices

microwave devices, Gan high-frequency high-power microwave devices have been used in military radars, intelligent weapons and communication systems. In the future, Gan microwave devices are expected to be used in civil fields such as 4g-5g mobile communication base stations

the market survey company predicts that the Gan RF device market will expand twice as much from 2016 to 2020, and the compound annual growth rate (CAGR) of the market will reach 4%; By the end of 2020, the market scale will be expanded to 2.5 times of the current one

The applications of Gan in the field of national defense mainly include ied jammers, military communications, radars, electronic countermeasures, etc. Gan will be applied in more and more national defense products, which fully reflects its great advantages in improving power, reducing size and simplifying design

major manufacturers of Gan microwave devices in the world:

major manufacturers of Gan microwave devices in the world

lasers and detectors

in the application field of lasers and detectors, Gan lasers have been successfully used in Blu ray DVD. Blue and green lasers will have a huge market space in the future. In the projection display fields such as micro projection and laser 3D projection, the output value of blue lasers and green lasers is about US $200million, If the technological bottleneck is broken, the potential output value will reach 50billion US dollars. Xiuer Nakamura, the 2014 Nobel Prize winner, believes that the next generation of lighting technology should be "laser lighting" based on GaN lasers, which is expected to integrate lighting and display. At present, only foreign companies such as Nichia of Japan and OSRAM of Germany can provide commercialized GaN based lasers

due to its excellent photoelectric properties and radiation resistance, gallium nitride can also be used as a high-energy ray detector. GaN based UV detectors can be used in missile early warning, satellite secret communication, various environmental monitoring, chemical and biological detection and other fields, such as nuclear radiation detectors, X-ray imagers, etc., but they have not been industrialized

related acquisition events in recent years

related acquisition events involving third-generation semiconductor manufacturers

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